Characteristics of Bismuth Layered SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O<sub>3</sub>

DOI Web Site Web Site 被引用文献43件 参考文献38件
  • Mihara Takashi
    Basic Research Dept., Corporate Research Division, Olympus Optical Corp., Ltd. Hachioji, Tokyo, Japan
  • Yoshimori Hiroyuki
    Basic Research Dept., Corporate Research Division, Olympus Optical Corp., Ltd. Hachioji, Tokyo, Japan
  • Watanabe Hitoshi
    Basic Research Dept., Corporate Research Division, Olympus Optical Corp., Ltd. Hachioji, Tokyo, Japan
  • Araujo Carlos A. Paz de
    University of Colorado at Colorado Springs, Colorado Springs, CO. USA and Symetrix Corp., Colorado Springs, CO., USA

書誌事項

タイトル別名
  • Characteristics of Bismuth Layered SrBi2Ta2O9 Thin-Film Capacitors and Comparison with Pb(Zr,Ti)O3.
  • Characteristics of bismuth layered SrBi2Ta2O9 thin-film capacitors and comparison with Pb(Zr, Ti)O3, Jpn
公開日
1995
DOI
  • 10.1143/jjap.34.5233
公開者
The Japan Society of Applied Physics

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説明

We have developed the series of thin-film bismuth layer structured ferroelectric (BLSF) materials such as SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions using metallo-organic-decomposition (MOD) spin-on coating techniques. We found that SrBi2Ta2O9 is one of the best potential candidate materials for ferroelectric nonvolatile memories. The SrBi2Ta2O9 thin-film capacitor had the remanent polarization (P r+-P r-) of 20 µ C/cm2, coercive field of 35 kV/cm and dielectric constant of 250. SrBi2Ta2O9 thin film on platinum electrode has fatigue-free characteristics for up to 2× 1011 cycles without requiring any complicated electrode system such as conductive oxide. Moreover, SrBi2Ta2O9 thin film has many advantages, e.g., high signal/noise ratio of 8 at 1.2 V, low-voltage operation at as low as 1 V, long data-retention, little surface effect, superior imprint properties and low leakage current. We considered that these advantages are due to (1) less space charge and (2) the inherent domain motion.

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