Dynamics of Phasons; Phase Defects Formed on Dimer Rows, and Related Structural Changes of the Si(100) Surface at 80 K Studied by Scanning Tunneling Microscopy.
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- Shigekawa Hidemi
- Institute of Materials Science, and Center for TARA, Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba 305, Japan
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- Miyake Koji
- Institute of Materials Science, and Center for TARA, Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba 305, Japan
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- Ishida Masahiko
- Institute of Materials Science, and Center for TARA, Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba 305, Japan
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- Hata Kenji
- Institute of Materials Science, and Center for TARA, Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba 305, Japan
書誌事項
- タイトル別名
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- Dynamics of Phasons Phase Defects Forme
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Type-P defects, which are mobile phase defects on dimer rows with a structure similar to that of the type-C defect, were observed on Si(100) surface at 80 K, however, the observed surface structure was mainly c(4× 2), contrary to the previous results obtained at 6 K. Complete p(2× 2) arrangement was unstable, and type-P defects tended to form pairs with other type-P defects on neighboring dimer rows, resulting in a reduction of the area with complete p(2× 2) arrangement. This is the first observation of the interacting phasons; type-P defects formed on Si(100) surface. The observed results were analyzed with the Ising model, and domain boundaries between c(4× 2) and p(2× 2) arrangements were found to play an important role in the dynamics of type-P defects at 80 K.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (3A), L294-L297, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681224619648
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- NII論文ID
- 110003925514
- 130004523383
- 210000042504
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4163433
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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