Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN.

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  • Sugahara Tomoya
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Sato Hisao
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Hao Maosheng
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Naoi Yoshiki
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Kurai Satoshi
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Tottori Satoru
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Yamashita Kenji
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Nishino Katsushi
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Romano Linda T.
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Sakai Shiro
    Department of Electrical and Electronic Engineering, University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan

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タイトル別名
  • Direct Evidence that Dislocations are N

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説明

Plan-view transmission electron microscopy (TEM) and cathodoluminescence (CL) images were taken for the same sample at exactly the same location in n-type GaN grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD). There was a clear one to one correspondence between the dark spots observed in CL images and the dislocations in TEM foils, indicating that the dislocations are non-radiative recombination centers. The hole diffusion length in n-type GaN was estimated to be neighboring 50 nm by comparing the diameters of the dark spots in thick samples used for CL and samples that were thinned for TEM observation. The efficiency of light emission is high as long as the minority carrier diffusion length is shorter than the dislocation spacing.

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