Applications of Aluminium Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials.
-
- Bengtsson Stefan
- Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
-
- Bergh Mats
- Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
-
- Choumas Manolis
- Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
-
- Olesen Christian
- Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
-
- Jeppson Kjell O.
- Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
書誌事項
- タイトル別名
-
- Applications of Aluminium Nitride Films
この論文をさがす
抄録
Self-heating effects in silicon-on-insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. Aluminium nitride as a potential candidate for buried insulator material in future SOI-structures is investigated. Reactive sputtering was used to manufacture the aluminium nitride films. The deposited films exhibit low stress and fairly low surface roughness. Further, resistivities above 1014 Ωcm as well as low thermal resistances were obtained. Interfacial problems at the interface between silicon and aluminium nitride were handled by adding a thin (a few nm) film of thermally grown silicon dioxide to that interface. The deposited films could be bonded both directly and through an electrostatic technique to silicon wafers. The presented results show that it is possible to make SOI structures with aluminium nitride as buried insulator by means of wafer bonding and subsequent etch-back.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 35 (8), 4175-4181, 1996
The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282681225332352
-
- NII論文ID
- 210000039561
- 110003905389
-
- NII書誌ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
-
- NDL書誌ID
- 4060012
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可