Real-Time Monitoring and Control of Plasma Etching.

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  • Sarfaty Moshe
    ERC for Plasma–Aided Manufacturing, University of Wisconsin–Madison, WI 53706, USA
  • Baum Chris
    ERC for Plasma–Aided Manufacturing, University of Wisconsin–Madison, WI 53706, USA
  • Harper Michael
    ERC for Plasma–Aided Manufacturing, University of Wisconsin–Madison, WI 53706, USA
  • Hershkowitz Noah
    ERC for Plasma–Aided Manufacturing, University of Wisconsin–Madison, WI 53706, USA
  • Shohet Juda L.
    ERC for Plasma–Aided Manufacturing, University of Wisconsin–Madison, WI 53706, USA

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  • Real-Time Monitoring and Control of P1asma Etching

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Real-time etch rate of thin transparent films is determined within seconds by an in-situ two-color laser interferometer. The use of two colors improves the accuracy of the calculated rates, provides an absolute measure of film thickness for endpoint prediction, and differentiates between etching and deposition. The tool state parameters, rf power to the antenna and the wafer stage, gas pressure and flow rates, are computer controlled and monitored. Real-time etch rate characterization is obtained by monitoring the etch dependence on varying tool state parameters. The density of the etch radicals, chlorine and fluorine, is obtained with xenon and argon actinometry using optical emission and mass spectra. An etch rate model, based on the input power to the wafer stage and the relative density of the etch radicals, is used to develop a model-based real-time control algorithm. This algorithm has been used to control the etch rate of unpatterned polysilicon and SiO2.

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