Direct Wafer Bonding of a (001) InP-Based Strained Multiple Quantum Well on a (110) Si Substrate with a GaAs Buffer Layer, Aligning Cleavage Planes of InP and Si.

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  • Direct Wafer Bonding of a 001 InP-Based

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We demonstrate direct wafer bonding of a (001) InP-based structure and a (110) Si substrate with a GaAs buffer layer. Cleavage planes of the InP and Si are aligned to obtain a smooth cleaved facet of the InP. Cross-sectional transmission electron microscope observation shows that the InP region is dislocation-free, and that an unexpected In region is formed at the boned interface. Strong intensity is achieved in the photoluminescence spectrum measured at room-temperature. The results confirm that our method of direct bonding makes it possible to achieve smooth cleaved facets and high crystalline quality in a III-V layer fabricated on a Si substrate.

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