Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Film Vacuum Deposited on ZnS Substrate.

DOI Web Site Web Site 16 References
  • Uchida Takashi
    Department of Electronic Engineering, The National Defense Academy, Hashirimizu, Yokosuka 239, Japan
  • Shimizu Takashi
    Department of Electronic Engineering, The National Defense Academy, Hashirimizu, Yokosuka 239, Japan
  • Yasuoka Yoshizumi
    Department of Electronic Engineering, The National Defense Academy, Hashirimizu, Yokosuka 239, Japan

Search this article

Description

The Hall mobility of Ge thin films deposited on ZnS substrates at a substrate temperature of 600° C was 360 cm2/ V·s for a hole concentration of 3× 1017 cm-3. This value was about 3.6 times larger than that obtained for Ge films deposited on Si3N4 substrates. A point-contact warm carrier device fabricated using Ge film deposited on ZnS substrate has a detected voltage for CO2 laser radiation about ten times higher than that of a device fabricated using Ge film deposited on Si3N4 substrate.

Journal

References(16)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top