Luminescence from the Thermally Treated Cerium Oxide on Silicon.

DOI Web Site Web Site 被引用文献1件 参考文献13件
  • Choi Won Chel
    Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130–650, Korea
  • Lee Ho Nyung
    Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130–650, Korea
  • Kim Yong
    Department of Physics, College of Natural Sciences, DongA University, Hadan 2–Dong 840, Saha–gu, Pusan 604–714, Korea
  • Park Hyun Min
    Materials Evaluation Center, Korea Research Institute of Standards and Science, P.O.Box 102, Yusong, Taejon 305–600, Korea
  • Kim Eun Kyu
    Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130–650, Korea

書誌事項

公開日
1999
DOI
  • 10.1143/jjap.38.6392
公開者
The Japan Society of Applied Physics

この論文をさがす

説明

As an efficient ultra violet/blue (UVB) luminescent material compatible with Si-based optoelectronics, we introduce thermally treated cerium oxide (CeOx) on silicon. UVB luminescence ranging from 358 nm to 450 nm is observed at room temperature for thermally treated CeOx thin films. The luminescence is attributed to Ce4.667(SiO4)3O and Ce2Si2O7 generated during thermal treatment.

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (13)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ