Yield Measurement of Secondary Electrons Emitted from Silicon Dioxide Film in Negative-Ion Bombardment.

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  • Toyota Yoshitaka
    Department of Electronic Science and Engineering, Kyoto University, Yoshida–honmachi, Sakyo–ku, Kyoto 606–01, Japan
  • Tsuji Hiroshi
    Department of Electronic Science and Engineering, Kyoto University, Yoshida–honmachi, Sakyo–ku, Kyoto 606–01, Japan
  • Gotoh Yasuhito
    Department of Electronic Science and Engineering, Kyoto University, Yoshida–honmachi, Sakyo–ku, Kyoto 606–01, Japan
  • Ishikawa Junzo
    Department of Electronic Science and Engineering, Kyoto University, Yoshida–honmachi, Sakyo–ku, Kyoto 606–01, Japan

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  • Yield Measurement of Secondary Electron

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Abstract

The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.

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