Selective Area Growth of GaN on Si Substrate Using SiO<sub> 2</sub> Mask by Metalorganic Vapor Phase Epitaxy

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  • Kawaguchi Yasutoshi
    Department of Electronics, School of Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya, Aichi 464–8603, Japan
  • Honda Yoshio
    Department of Electronics, School of Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya, Aichi 464–8603, Japan
  • Matsushima Hidetada
    Department of Electronics, School of Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya, Aichi 464–8603, Japan
  • Yamaguchi Masahito
    Department of Electronics, School of Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya, Aichi 464–8603, Japan
  • Hiramatsu Kazumasa
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama–cho, Tsu, Mie 514–8507, Japan
  • Sawaki Nobuhiko
    Department of Electronics, School of Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya, Aichi 464–8603, Japan

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  • Selective Area Growth of GaN on Si Substrate Using SiO2 Mask by Metalorganic Vapor Phase Epitaxy.
  • Selective Area Growth of GaN on Si Subs

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Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO2) mask. The facet structure revealed that the <11\=20> axis of hexagonal GaN is parallel to the <110> axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

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