Crystallization of Amorphous GeSe2 Semiconductor by Isothermal Annealing without Light Radiation
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- Sakai Kentaro
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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- Yoshino Kenji
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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- Fukuyama Atsuhiko
- Department of Materials Science, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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- Yokoyama Hirosumi
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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- Ikari Tetsuo
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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- Maeda Kouji
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
書誌事項
- タイトル別名
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- Crystallization of Anrorphous GeSe2 Semiconductor by Isothermal Annealing without Light Radiation.
- Crystallization of Amorphous GeSe<sub>2</sub> Semiconductor by Isothermal Annealing without Light Radiation
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抄録
The thermal-induced crystallization process of melt-quenched amorphous GeSe2 was studied. The low-temperature (LT) form, LT-GeSe2 and the high-temperature (HT) form, HT-GeSe2 were observed with Raman spectroscopy, differential scanning calorimetry (DSC) and an X-ray diffractometer. We observed the X-ray diffraction pattern of LT-GeSe2 and identified the reflection index. The crystal parameters resembled those of LT-GeS2 crystal. The growth conditions for crystallization of LT-GeSe2 and HT-GeSe2 were clarified from the time-temperature-transformation diagram. It was found that amorphous GeSe2 crystallizes at first into LT-GeSe2 and then LT-GeSe2 changes into HT-GeSe2. The activation energy ((Ea)) from amorphous GeSe2 to LT-GeSe2 is estimated to be 4.6 eV from the DSC measurement which corresponds to the boundary of the phases in the T-T-T diagram. The activation energy from LT-GeSe2 to HT-GeSe2 could not be obtained.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 39 (3A), 1058-1061, 2000
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681227748864
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- NII論文ID
- 110003947572
- 210000046768
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 5320034
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可