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Crystallization of Anrorphous GeSe2 Semiconductor by Isothermal Annealing without Light Radiation.

  • Sakai Kentaro
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
  • Yoshino Kenji
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
  • Fukuyama Atsuhiko
    Department of Materials Science, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
  • Yokoyama Hirosumi
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
  • Ikari Tetsuo
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
  • Maeda Kouji
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University, <BR> 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan

Bibliographic Information

Other Title
  • Crystallization of Amorphous GeSe2 Semiconductor by Isothermal Annealing without Light Radiation

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Abstract

The thermal-induced crystallization process of melt-quenched amorphous GeSe2 was studied. The low-temperature (LT) form, LT-GeSe2 and the high-temperature (HT) form, HT-GeSe2 were observed with Raman spectroscopy, differential scanning calorimetry (DSC) and an X-ray diffractometer. We observed the X-ray diffraction pattern of LT-GeSe2 and identified the reflection index. The crystal parameters resembled those of LT-GeS2 crystal. The growth conditions for crystallization of LT-GeSe2 and HT-GeSe2 were clarified from the time-temperature-transformation diagram. It was found that amorphous GeSe2 crystallizes at first into LT-GeSe2 and then LT-GeSe2 changes into HT-GeSe2. The activation energy ((Ea)) from amorphous GeSe2 to LT-GeSe2 is estimated to be 4.6 eV from the DSC measurement which corresponds to the boundary of the phases in the T-T-T diagram. The activation energy from LT-GeSe2 to HT-GeSe2 could not be obtained.

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Details

  • CRID
    1390282681227748864
  • NII Article ID
    110003947572
    210000046768
  • NII Book ID
    AA10457675
  • DOI
    10.1143/jjap.39.1058
  • ISSN
    13474065
    00214922
  • NDL BIB ID
    5320034
  • Text Lang
    en
  • Data Source
    • JaLC
    • NDL
    • Crossref
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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