Extraction of the Capacitance of a Metal Oxide Semiconductor Tunnel Diode(MOSTD) Biased in Accumulation.

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  • Matsumura Mieko
    Texas Instruments Tsukuba Research and Development Center, Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305–0841, Japan
  • Hirose Yutaka
    Texas Instruments Tsukuba Research and Development Center, Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305–0841, Japan

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Abstract

We present a method to extract the capacitance of a metal oxide semiconductor tunnel diode (MOSTD) biased in accumulation which has been undeterminable by the conventional capacitance-voltage method. An MOSTD is modeled by a parallel pair of a capacitor and a resistor describing the oxide in series with another resistor associated with the substrate. All the three equivalent circuit elements are then extractable by evaluating the impedance spectra of the MOSTD “only” at the characteristic frequency where the magnitude of the imaginary part of the impedance reaches the maximum. The effectiveness of the method is demonstrated with the MOSTDs with 2.5 nm thick oxides.

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