Morphology of Silicon Oxide Film on Silicon Wafer Surface during Its Removal Process in a Hydrogen Ambient.

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  • Mayusumi Masanori
    Super Silicon Research Institute Corp., 555-1 Nakanoya, Annaka, Gunma 379-0125, Japan
  • Imai Masato
    Super Silicon Research Institute Corp., 555-1 Nakanoya, Annaka, Gunma 379-0125, Japan
  • Nakahara Shinji
    Super Silicon Research Institute Corp., 555-1 Nakanoya, Annaka, Gunma 379-0125, Japan
  • Inoue Kazutoshi
    Super Silicon Research Institute Corp., 555-1 Nakanoya, Annaka, Gunma 379-0125, Japan
  • Habuka Hitoshi
    Department of Chemical Engineering Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama 240-8501, Japan

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In order to develop the low-temperature silicon epitaxial growth process, the change in the surface morphology of the silicon dioxide film and the silicon surface is studied in a transient state, for the first time, at 1223 K at a pressure of 40-101 kPa in a hydrogen ambient. A very smooth and clear silicon substrate surface is achieved using a uniform silicon dioxide film formed using ozonated ultrapure water and a very low flow rate of hydrogen gas. The surface morphology of the silicon substrate finally becomes smooth and the pit formation is suppressed, although the surface shows a nonuniform island appearance during the removal of the silicon dioxide film. The microroughness of the silicon substrate surface is improved by heating in a hydrogen ambient and by the silicon epitaxial film growth after complete removal of the ozone oxide film.

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