Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy.

Takenaka Keiichi, Asahi Hajime, Koh Hideki, Asami Kumiko, Gonda Shun–ichi, Oe Kunishige

doi:10.1143/jjap.38.1026

Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy.

DOI Web Site Web Site Web Site 参考文献19件

Takenaka Keiichi

The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Asahi Hajime

The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Koh Hideki

The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Asami Kumiko

The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Gonda Shun–ichi

The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Oe Kunishige

NTT Opto Electronics Laboratories, Atsugi, Kanagawa 243–0124, Japan present address: Kyoto Institute of Technology, Sakyo–ku, Kyoto 606–8585, Japan

この論文をさがす

説明

TlInGaAs quaternary layers are grown on InP substrates by gas-source molecular beam epitaxy (MBE) for the first time. The application of TlInGaAs was proposed for long-wavelength optical devices as well as temperature-insensitive wavelength laser diodes. During the growth, RHEED (reflection high-energy electron diffraction) patterns show (2× 2) reconstructions. Successful growth of TlInGaAs is confirmed with X-ray diffraction measurements. PL emission is observed and the temperature variation of PL peak energy is as small as 0.1 meV/K.