Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure.
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- Chang Ting-Chang
- Department of Physics, National Sun Yat-Sen University, Taiwan, R.O.C. National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C.
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- Liu Po-Tsun
- Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University,<BR> 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C.
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- Yang Ya-Liang
- National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C.
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- Hu Jung-Chih
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, R.O.C.
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- Sze Simon M.
- Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University,<BR> 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C. National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C.
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Abstract
A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 39 (2A), L82-L85, 2000
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390282681230444672
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- NII Article ID
- 110003928684
- 210000048622
- 130004527036
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- NII Book ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL BIB ID
- 4986281
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed