The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs.
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- Ogawa Masahiro
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
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- Funato Mitsuru
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
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- Ishido Teruki
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
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- Fujita Shizuo
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
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- Fujita Shigeo
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
書誌事項
- タイトル別名
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- Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
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抄録
Cubic GaN (c-GaN) layers are grown on GaAs(001) substrates by metalorganic vapor phase epitaxy. To attain high-quality c-GaN, we investigate growth conditions and buffer layer structures. It is found that by increasing the growth rate from 0.35 to 1.05 μm/h, the growth temperature region where the c-GaN composition reaches its maximum (90%) is shifted from 700–800ºC to 850–900ºC. Regarding the film properties, excitonic emission and high resistivity are realized with the faster growth rate. Subsequently, the c-GaN composition is improved by the use of a double buffer layer (DBL) structure instead of the conventional single buffer layer structure without degrading the achieved optical and electrical properties. The DBL structure preserves a relatively high c-GaN composition even in thick layers.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 39 (2A), L69-L72, 2000
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681230446976
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- NII論文ID
- 210000048578
- 110003928680
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4986255
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可