Simulation of Phosphorus Diffusion Profiles with Different Phosphorus Surface Concentration at the Same Diffusion Temperature in Silicon.

DOI Web Site Web Site 参考文献32件
  • Yoshida Masayuki
    Yoshida Semiconductor Laboratory, 2-2-37, Kusagae, Chuo-ku, Fukuoka 810-0045, Japan
  • Tanaka Shuji
    Fukuoka Institute of Technology, Wajiro-higashi, Higashi-ku, Fukuoka 811-0295, Japan

この論文をさがす

抄録

Four diffusion models based on the pair diffusion models of vacancy and interstitial mechanisms are adopted for the simulation of six experimental profiles of P surface concentration, CP<FONT SIZE="-1">+</FONT>s, from 3 × 1020 to 2.5 × 1018 cm-3 at 900°C. Values of fitting parameters are determined to simulate the profiles of CP<FONT SIZE="-1">+</FONT>s = 3 × 1020 and 2.5 × 1018 cm-3 well. Changing only CP<FONT SIZE="-1">+</FONT>s, other profiles are simulated. At high CP<FONT SIZE="-1">+</FONT>s, a large amount of excess I is generated. For the simulation of CP<FONT SIZE="-1">+</FONT>s = 3 × 1020 cm-3, it is necessary to control excess I. For the simulation of CP<FONT SIZE="-1">+</FONT>s < 3 × 1020 cm-3, the effect of a main parameter upon the control of excess I should decrease with decreasing CP<FONT SIZE="-1">+</FONT>s. Based on this, the decrease in quasi self-interstitial formation energy or the ratio of the diffusion coefficient of a negatively charged P-V pair to that of a neutral one is suitable for the main parameter. To decide the suitable main parameter, it is necessary to obtain a more accurate experimental profile, paying attention to whether or not the profile has a plateau.

収録刊行物

参考文献 (32)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ