Tunneling current in InGaAs and optimum design for InGaAs/InP avalanche photodiode.

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  • Ando Hiroaki
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
  • Kanbe Hiroshi
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
  • Ito Masanori
    Fujitsu Laboratories
  • Kaneda Takao
    Fujitsu Laboratories

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Abstract

Breakdown voltage and dark current density in p+n and n+p In0.53Ga0.47As diodes are compared with theoretical values taking the backward tunneling current into account. Predominant origin of dark current in an InGaAs diode is attributed to the tunneling current. Using these results, optimum design of an InGaAs/InP avalanche photodiode (APD) to obtain low dark current, high multiplication gain, high quantum efficiency and fast response is also discussed.

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