Tunneling current in InGaAs and optimum design for InGaAs/InP avalanche photodiode.
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- Ando Hiroaki
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- Kanbe Hiroshi
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- Ito Masanori
- Fujitsu Laboratories
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- Kaneda Takao
- Fujitsu Laboratories
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説明
Breakdown voltage and dark current density in p+n and n+p In0.53Ga0.47As diodes are compared with theoretical values taking the backward tunneling current into account. Predominant origin of dark current in an InGaAs diode is attributed to the tunneling current. Using these results, optimum design of an InGaAs/InP avalanche photodiode (APD) to obtain low dark current, high multiplication gain, high quantum efficiency and fast response is also discussed.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 19 (6), L277-L280, 1980
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681232960640
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- NII論文ID
- 110003896595
- 130003462852
- 210000020594
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- NII書誌ID
- AA00690800
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- ISSN
- 13474065
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可