Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition.
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- Li Hongdong
- Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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- Tsukihara Masashi
- Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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- Naoi Yoshiki
- Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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- Sakai Shiro
- Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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説明
Dislocation defects in a GaN epilayer grown on a low-temperature GaN-rich GaNP (LT-GaNP) buffer on sapphire substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) were investigated by means of transmission electron microscopy and atomic force microscopy. The GaNP-buffer-based high-temperature GaN (HT-GaN) layers have a dislocation density as low as 5× 108 cm-2, which can be compared to the best results for GaN epilayers grown on sapphire by atmospheric pressure MOCVD using the conventional LT-GaN or -AlN buffer. The dislocation density reduction could be predominately attributed to an enhanced lateral overgrowth for the HT-GaN layer grown on a GaNP buffer, which is confirmed by the observation of a special morphology evolution beginning from the GaNP buffer.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 41 (11B), L1332-L1335, 2002
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681233585664
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- NII論文ID
- 110006351054
- 130004529033
- 210000052616
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6358115
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可