Microscopic Observation of X-Ray Irradiation Damage in Ultra-Thin SiO2 Films.

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  • Ohmori Kenji
    Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
  • Goto Tomokazu
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
  • Ikeda Hiroya
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
  • Sakai Akira
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
  • Zaima Shigeaki
    Center for Cooperative Research in Advanced Science & Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
  • Yasuda Yukio
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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  • Microscopic Observation of X-Ray Irradiation Damage in Ultra-Thin SiO<sub>2</sub> Films

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Abstract

X-ray irradiation damage in ultra-thin SiO2 films has been investigated on an atomic scale using scanning tunneling microscopy (STM). From the X-ray photoelectron spectroscopy time-dependent measurement, the creation of hole traps and the successive electron trapping are observed with increasing irradiation time. In both cases, bright spots are observed in the STM images. We conclude that the bright spots which appeared in the hole trapping duration correspond to the hole traps in the SiO2 film. The bright spots which appeared in the electron trapping duration are larger in height and diameter in the STM images than those that appeared in the hole trapping duration. Although most of the bright spots in the hole trapping duration vanish with annealing at 600°C, the larger bright spots remain after the annealing. It is considered that the larger bright spots in the electron trapping duration correspond to leakage sites in the ultra-thin SiO2 films. Moreover, these trap sites are considered to originate from surface defects pre-existing on a clean Si(100) surface.

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