Suppression of Gate Depletion in p〔+〕-Polysilicon-Gated Sub-40nm pMOSFETs by Laser Thermal Processing

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  • Yamamoto Tomonari
    Device Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center
  • Kubo Tomohiro
    Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center
  • Okabe Ken-ichi
    Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center
  • Sukegawa Takae
    Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center
  • Wang Yun
    Ultratech Inc.
  • Lin Tengshing
    Ultratech Inc.
  • Talwar Somit
    Ultratech Inc.
  • Kase Masataka
    Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center

書誌事項

タイトル別名
  • Suppression of Gate Depletion in p+-Polysilicon-Gated Sub-40nm pMOSFETs by Laser Thermal Processing
  • Suppression of Gate Depletion in p<sup>+</sup>-Polysilicon-Gated Sub-40 nm pMOSFETs by Laser Thermal Processing

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説明

Laser thermal processing (LTP) was investigated as a gate pre-annealing technique and its advantages over rapid thermal annealing (RTA) with regard to both gate activation and suppression of boron penetration were confirmed by evaluating the electrical characteristics of sub-40 nm p-metal oxide semiconductor field effect transistors (pMOSFETs). Laser annealing transformed amorphous Si in which high doses of boron were implanted into poly-Si with highly activated boron profiles down to the gate/gate oxide interface. By suppressing gate depletion with suppressing boron penetration, LTP results in an on-current at Ioff=70 [nA/μm] that is 4% greater than that in a device fabricated using conventional RTA. The off-state Ig current that flows mainly from the p+ poly-Si gate to the drain overlap region is smaller in devices fabricated using LTP because the reduced roughness of the poly-Si gate/gate oxide interface in these devices reduces the local electric field enhancement.

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