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- Sakata Toshiya
- Biomaterials Center, National Institute for Materials Science
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- Kamahori Masao
- Central Research Laboratory, Hitachi Ltd.
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- Miyahara Yuji
- Biomaterials Center, National Institute for Materials Science
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説明
We have been developing a genetic field-effect transistor (FET) based on the potentiometric detection of hybridization and intercalation on the Si3N4 gate insulator. In this study, we demonstrated the detection of charge density change as a result of hybridization and intercalation using genetic FETs. Since the electrical output signal is obtained with the genetic FET without any labeling reagent, as compared with the conventional fluorescence-based DNA chips, the genetic FET platform is suitable for a simple and inexpensive system for genetic analysis in clinical diagnostics.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (4B), 2854-2859, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681241640192
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- NII論文ID
- 210000057850
- 10015705877
- 130004533778
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 7307043
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
- KAKEN
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
