Isotope Effects on H and D Coadsorptions on Si Surfaces
-
- Rahman Faridur
- Department of Electrical Engineering, Kyushu Institute of Technology
-
- Ohnishi Nobuyuki
- Department of Electrical Engineering, Kyushu Institute of Technology
-
- Khanom Fouzia
- Department of Electrical Engineering, Kyushu Institute of Technology
-
- Inanaga Shoji
- Department of Electrical Engineering, Kyushu Institute of Technology
-
- Namiki Akira
- Department of Electrical Engineering, Kyushu Institute of Technology
Search this article
Description
We studied isotope effects on D and H coadsorptions on the Si(100) and Si(111) surfaces, employing an atomic beam method combined with a desorption measurement technique. We evaluated D:H ratios to be approximately 6:4 for both the Si(100) and Si(111) surfaces exposed to the atomic H/D beam mixed with equal amounts of H and D atoms. This observed isotope effect was interpreted in terms of mass-dependent abstraction of surface adatoms by incident atoms. The observed D:H ratios could be well reproduced by the simulation based on the previously reported isotope effect on D(H) abstraction by H atoms.
Journal
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 43 (2), 726-729, 2004
The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1390282681241756800
-
- NII Article ID
- 10012040743
-
- NII Book ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
-
- NDL BIB ID
- 6858430
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed