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- Rahman Faridur
- Department of Electrical Engineering, Kyushu Institute of Technology
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- Ohnishi Nobuyuki
- Department of Electrical Engineering, Kyushu Institute of Technology
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- Khanom Fouzia
- Department of Electrical Engineering, Kyushu Institute of Technology
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- Inanaga Shoji
- Department of Electrical Engineering, Kyushu Institute of Technology
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- Namiki Akira
- Department of Electrical Engineering, Kyushu Institute of Technology
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説明
We studied isotope effects on D and H coadsorptions on the Si(100) and Si(111) surfaces, employing an atomic beam method combined with a desorption measurement technique. We evaluated D:H ratios to be approximately 6:4 for both the Si(100) and Si(111) surfaces exposed to the atomic H/D beam mixed with equal amounts of H and D atoms. This observed isotope effect was interpreted in terms of mass-dependent abstraction of surface adatoms by incident atoms. The observed D:H ratios could be well reproduced by the simulation based on the previously reported isotope effect on D(H) abstraction by H atoms.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (2), 726-729, 2004
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681241756800
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- NII論文ID
- 10012040743
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6858430
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
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