Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique
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- Sato Tsutomu
- Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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- Mizushima Ichiro
- Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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- Taniguchi Shuichi
- Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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- Takenaka Keiichi
- Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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- Shimonishi Satoshi
- Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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- Hayashi Hisataka
- Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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- Hatano Masayuki
- Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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- Sugihara Kazuyoshi
- Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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- Tsunashima Yoshitaka
- Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Description
A practical method for the fabrication of a silicon on nothing (SON) structure with the desired size and shape has been developed by using the empty-space-in-silicon (ESS) formation technique. It was found that the SON structure could be precisely controlled by the initial shape and layout of the trenches. The size of ESS is determined by the size of the initial trench. The desired shapes of ESS, such as spherical, pipe-shaped and plate-shaped, can be fabricated by changing the arrangement of the initial trenches. The fabricated SON region over ESS has excellent crystallinity adoptable for ultra-large-scale integrated circuit (ULSI) applications. The SON structure would be a promising substrate structure for various manufacturing technologies, such as the micro-electro-mechanical system (MEMS), photonic crystals and waveguides.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (1), 12-18, 2004
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390282681242335488
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- NII Article ID
- 210000055160
- 10011948435
- 130004531388
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- NII Book ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL BIB ID
- 6832340
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed