A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 .MU.m

DOI Web Site Web Site 2 Citations 15 References
  • Ohtani Keita
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University PRESTO, Japan Science and Technology Agency
  • Fujita Kazuue
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
  • Ohno Hideo
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University

Bibliographic Information

Other Title
  • A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 µm

Search this article

Description

We report a low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 μm. In order to reduce the threshold current density, InAs/AlGaSb superlattice structures providing large oscillator strength and fast carrier depopulation are used for the active layers. Observed threshold current density at 80 K is 0.92 kA/cm2, which is about 5 times lower than that of the first InAs/AlSb quantum cascade laser reported earlier. This is among lowest threshold current density of quantum cascade lasers operating in the mid-infrared spectrum region.

Journal

Citations (2)*help

See more

References(15)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top