Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
-
- Nishiguchi Katsuhiko
- NTT Basic Research Laboratories, NTT Corporation
-
- Crauste Olivier
- ESPCI
-
- Namatsu Hideo
- NTT Basic Research Laboratories, NTT Corporation
-
- Horiguchi Seiji
- Faculty of Engineering and Resource Science, Akita University
-
- Ono Yukinori
- NTT Basic Research Laboratories, NTT Corporation
-
- Fujiwara Akira
- NTT Basic Research Laboratories, NTT Corporation
-
- Takahashi Yasuo
- Graduate School of Information Science and Technology, Hokkaido University
-
- Inokawa Hiroshi
- NTT Basic Research Laboratories, NTT Corporation
この論文をさがす
抄録
A back-gate (BG) effect on a Coulomb blockade in a double-gate silicon-on-insulator (SOI) nanowire is investigated. The nanowire, which is situated at the bottom of a trench and connected to thicker source/drain regions, has a naturally formed barrier at both ends and works as a single-electron transistor at low temperatures. We found that a negative BG voltage increases the charging energy of the Coulomb-blockade island in the nanowire as well as the tunnel resistance of the barriers. This indicates the possibility that the BG voltage shifts the electron wave functions in the source/drain area away from the Coulomb-blockade island and decreases the capacitance of the small junctions located at both ends of the island.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 44 (10), 7717-7719, 2005
The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282681243377152
-
- NII論文ID
- 130004766081
-
- NII書誌ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
-
- NDL書誌ID
- 7479826
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
-
- 抄録ライセンスフラグ
- 使用不可