Temperature dependence of the thermoelectric properties of Si doped SiC.
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- Okamoto Yoichi
- Department of Materials Science and Engineering, National Defense Academy
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- Inai Hiroshi
- Department of Materials Science and Engineering, National Defense Academy
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- Morimoto Jun
- Department of Materials Science and Engineering, National Defense Academy
書誌事項
- タイトル別名
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- Temperature dependence of the thermoele
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抄録
Thermoelectric properties of the Si doped SiC were measured. It is intended to reduce the thermal conductivity by addition of isoelectric element Si. Measurements of electrical resistivity, thermoelectric power and thermal conductivity were made on SiC thermoelectric semiconductor as a function of both Si doping concentration (over the range of 1.0 wt.%-40.0 wt.%) and temperature (from room temperature to 750°C). Measurements of Hall coefficient, X-ray crystallography and EPMA were also made on these samples. The thermal conductivity decreases with increase of Si concentration. At Si concentration of 40.0 wt.%, minimum thermal conductivity reached to 13 W/mK. The figure of merit Z was calculated from electrical resistivity, thermoelectric power and thermal conductivity. The maximum value of the figure of merit reaches 2×10-4K-1 at 750°C and Si concentration of 40.0 wt.%.
収録刊行物
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- 粉体および粉末冶金
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粉体および粉末冶金 45 (10), 905-908, 1998
一般社団法人 粉体粉末冶金協会
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詳細情報 詳細情報について
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- CRID
- 1390282681285195904
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- NII論文ID
- 10002052911
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- NII書誌ID
- AN00222724
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- ISSN
- 18809014
- 05328799
- http://id.crossref.org/issn/05328799
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- NDL書誌ID
- 4585451
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可