Improvement of the tribological properties of ceramics by Si film deposition and ion irradiation.

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  • Ｓｉ薄膜の蒸着とイオン照射によるセラミックスのトライボロジー特性の改善
  • Si ハクマク ノ ジョウチャク イオン ショウシャ ニ ヨル セラミックス

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Abstract

Masao Kohzaki, Shoji Noda. Haruo Doi and Osami Kamigaito : Improvement of The Tribological Properties of Ceramics by Si Film Deposition and Ion Irradiation.<BR>We studied the tribological properties of surface modified SiC ceramics with a pin-on-disk friction and wear tester in an ambient atmosphere without oil lubrication. The friction coefficient between Si film deposited SiC(Si/SiC) and a diamond pin was about 0.05, which was smaller than one half of that between SiC and a diamond pin. The low friction state of Si/SiC lasted for 40 hours when the Si/SiC was irradiated with Ar+ ions. Ar+ ion irradiation was also effective for reducing the wear. Effectively no wear was detected in Si/SiC irradiated to the dose over 5 × 1015 ions/cm2.

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