ラマン分光法を用いたCaN/Siの残留歪みの評価に関する研究

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  • Raman spectroscopic study of residual strain and stress in GaN layer grown on Si substrates
  • ラマン分光法を用いたGaN/Siの残留歪みの評価に関する研究
  • ラマン ブンコウホウ オ モチイタ GaN Si ノ ザンリュウ ヒズミ ノ ヒョウカ ニ カンスル ケンキュウ

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We have studied the residual strain and stress in semi-polar (1-101)GaN and conventional (0001)GaN grown on Si by means of Raman spectroscopy. By adopting the stress coefficients reported in the references, the residual strain of samples were deduced from the frequency shifts of the phonon modes in Raman spectra. As the results, it was found that the strain tensor of (1-101) GaN/Si was smaller than that of the (0001)GaN/Si in good agreement with the results obtained from the X-ray diffraction measurements.

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