Studies on Surface and Interface with X-ray Absorption Fine Structure (XAFS). Application of XAFS Measurements to the Study of Semiconductors.

DOI Web Site Web Site 28 References
  • OFUCHI Hironori
    Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
  • TABUCHI Masao
    Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
  • TAKEDA Yoshikazu
    Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University

Bibliographic Information

Other Title
  • Ｘ線吸収微細構造（ＸＡＦＳ）による表面，界面の解析　　ＸＡＦＳ　測定の半導体への応用
  • XAFS測定の半導体への応用
  • XAFS ソクテイ ノ ハンドウタイ エ ノ オウヨウ

Search this article

Abstract

We demonstrated that fluorescence XAFS measurements can reveal the local structures around dilute elements in thin semiconductor layers. In the GaAs samples doped with Er and O, majority of the Er atoms substituted Ga sublattices with adjacent two O atoms and two As atoms (Er-2O center). In the GaInN/GaN samples, it was shown that the segregation of InN phase occurred in the GaInN layer at a higher In-content (x = 0.30), although the segregation was not observed at a lower In-content (x = 0.05). XANES spectrum in the Tb-implanted SiO2 sample was observed by detecting X-ray-excited visible luminescence. The spectrum was quite similar to that was measured by detecting fluorescence X-ray.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 23 (6), 367-373, 2002

    The Surface Science Society of Japan

References(28)*help

See more

Details 詳細情報について

Report a problem

Back to top