書誌事項
- タイトル別名
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- Metalorganic Chemical Vapor Deposition of Nitrogen-Doped ZnSe/GaAs(100) by Alternate Growth and Plasma Doping.
抄録
Nitrogen-doped ZnSe layers have been grown using dimethylzinc and H2Se as precursors and N2 or N2+3H2 plasma as a dopant. With decreasing the VI/II flow ratio, N acceptors are incorporated more effectively. In the case of N2 plasma doping, the intensity of N acceptor-bound exciton emission is much higher than that of donor-bound exciton emission, but the layers exhibit n-type conductivity and the free-electron concentration increases with decreasing the VI/ II ratio. In the case of N2+3H2 plasma doping, on the other hand, the layers exhibit high resistivity and, after subsequent rapid thermal annealing at 700°C, some layers show p-type conductivity with hole concentration of∼1×1015 cm-3. This indicates that hydrogen causes not only passivation of the N acceptors but also suppression of the generation of donors. Methyl radicals play an important role in producing donor species. Prior to plasma doping, it is needed to prepare Zn-rich surface without methyl radicals in order to obtain p-type N-doped ZnSe layers.
収録刊行物
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- 表面科学
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表面科学 17 (5), 276-281, 1996
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390282681433458176
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- NII論文ID
- 130003683613
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- ISSN
- 18814743
- 03885321
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可