XPS Depth Profile Analysis of ArF Immersion Resists by using C<Sub>60</Sub> Ion Beam

DOI Web Site Web Site 1 Citations 30 References

Bibliographic Information

Other Title
  • ArF液浸用レジストのC<Sub>60</Sub>イオンビームを用いたXPS深さ方向状態解析
  • ArF液浸用レジストのC60イオンビームを用いたXPS深さ方向状態解析
  • ArF エキシンヨウ レジスト ノ C60 イオンビーム オ モチイタ XPS フカサ ホウコウ ジョウタイ カイセキ

Search this article

Description

Argon ion sputtering is one of the most accepted techniques for depth profiling in practical X-ray photoelectron spectroscopy (XPS) analysis, while this technique is known to cause severe degradation especially with organic materials. Sputtering system using buckminsterfullerene (C60) ion beam has recently been introduced to XPS apparatus as a new sputtering tool for depth profiling. It enables the XPS depth analysis of organic materials such as photoresists without chemical damages. In this paper, the XPS analysis using the C60 ion sputtering was applied to examine the depth distributions of a fluoropolymer in ArF immersion resists to clarify the mechanism of the water-repellency change between the co-polymer and blend polymer. In addition, the depth profiling of the resist is compared to those observed with other techniques such as angle resolved XPS analysis and XPS analysis on the gradient shaved surfaces.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 28 (7), 348-353, 2007

    The Surface Science Society of Japan

Citations (1)*help

See more

References(30)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top