Extremely Scaled Equivalent Oxide Thickness of High-<i>k</i> (<i>k</i>=40) HfO<sub>2</sub> Gate Stacks Prepared by Atomic Layer Deposition and Ti Cap Anneal

DOI Web Site 42 References

Bibliographic Information

Other Title
  • 原子層堆積法とTiキャップアニールによる極薄SiO<sub>2</sub>換算膜厚を持つhigh-<i>k</i>（<i>k</i>＝40）HfO<sub>2</sub>ゲートスタックの形成
  • 原子層堆積法とTiキャップアニールによる極薄SiO₂換算膜厚を持つhigh-k(k=40)HfO₂ゲートスタックの形成
  • ゲンシソウ タイセキホウ ト Ti キャップアニール ニ ヨル ゴクウス SiO ₂ カンサン マクアツ オ モツ high-k(k=40)HfO ₂ ゲートスタック ノ ケイセイ
  • Extremely Scaled Equivalent Oxide Thickness of High-k (k=40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Ti Cap Anneal

Search this article

Description

We fabricate ultra-thin HfO2 gate stacks of very high permittivity value by using atomic layer deposition (ALD) and Ti-cap post deposition annealing. The HfO2 layer is directly deposited on hydrophilicized Si surface by ALD. A cubic crystallographic phase is generated in ALD-HfO2 by short time annealing with Ti capping layer. The Ti layer absorbs residual oxygen in HfO2 layer. The reduced oxygen concentration during annealing suppresses the growth of the interfacial SiO2 layer. The dielectric constant of ALD-HfO2 is enhanced to ～40, and extremely scaled ～0.2 nm equivalent oxide thickness of total gate stack is obtained.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 33 (11), 610-615, 2012

    The Surface Science Society of Japan

References(42)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top