ＧａＡｓ，ＩｎＡｓナノウィスカーの成長と物性

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タイトル別名
  • Growth Characteristics of GaAs and InAs Nanowhiskers
  • GaAs InAs ナノウィスカー ノ セイチョウ ト ブッセイ

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Growth characteristics of GaAs and InAs nanowhiskers formed by using the vapor-liquid-solid growth method during metal organic vapor-phase epitaxy are reviewed. The nanowhiskers grown along the <111>B crystallographic orientation were as thin as 10-500 nanometers and up to 5 micrometers long. The width of grown nanowhiskers was dependent on the growth temperature and the thickness of Au deposit used as a growth catalyst. The minimum width of the nanowhiskers was estimated to be about several nanometers, which is a growth limit predicted by the Gibbs-Thomson effect. Current-voltage characteristics of selectively grown Si-doped GaAs nanowhiskers were measured. A step-like current change as large as 0.5 microamperes was reproducibly observed on the background current-voltage curve of between 0 and 1.0 microamperes, suggesting that carrier trap levels on the whisker surface might be involved in the change.

収録刊行物

  • 表面科学

    表面科学 29 (12), 736-739, 2008

    公益社団法人 日本表面科学会

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