書誌事項
- タイトル別名
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- InGaAs MOS Gate Stack Formation and the MOS Interface Properties
- InGaAs MOS ゲートスタック ケイセイ ト カイメン トクセイ
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説明
InGaAs MOS gate stack formation and the MOS interface control technologies, which are mandatory for realizing high performance InGaAs MOSFETs, are addressed with an emphasis on our recent achievements. Al2O3/InGaAs MOS gate stacks formed by Atomic Layer Deposition (ALD) are known as one of the most superior InGaAs MOS interfaces. The experimental results of Al2O3/InGaAs, HfO2/InGaAs and HfO2/Al2O3/InGaAs interfaces are presented. It is found that 1-nm-capaciatance equivalent thickness can be realized by HfO2/Al2O3/InGaAs gate stacks. Also, semiconductor inteface buffer layers inserted between InGaAs channels and gate oxides are shown to be effective in further improving the channel mobility.
収録刊行物
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- 表面科学
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表面科学 33 (11), 628-633, 2012
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390282681435686144
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- NII論文ID
- 130004486717
- 10031131003
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 024089420
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
