触媒化学気相堆積（Cat-CVD）法による太陽電池用高品質パッシベーション膜の形成

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  • Formation of High-Quality Passivation Films for Solar Cells by Cat-CVD
  • ショクバイ カガク キソウ タイセキ(Cat-CVD)ホウ ニ ヨル タイヨウ デンチヨウ コウヒンシツ パッシベーションマク ノ ケイセイ

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<p>Back-contact c-Si solar cells can realize superior performance due to no shadowing loss. Surface passivation with excellent quality is required for achieving sufficient conversion efficiency in the back-contact cells. Cat-CVD can produce high-quality passivation films owing to its plasma-damage-less nature. SiNx deposition at a low temperature and successive post annealing leads to a surface recombination velocity (SRV) of < 5 cm/s. The exposure of c-Si wafers to catalytically generated phosphorus radicals can form ultra-thin highly-doped layers (Cat-doping). This P-doped region acts to reduce an SRV to < 2 cm/s by combining with a Cat-CVD SiNx film. We have also established the passivation of rear c-Si surfaces by Cat-CVD a-Si with suppressing epitaxial growth by introducing ultra-thin oxide layers formed by dipping in H2O2. The formation of doped a-Si by Cat-doping has also been demonstrated, which will be applicable to the formation of patterned doping regions in Si heterojunction back-contact cells.</p>

収録刊行物

  • 表面科学

    表面科学 38 (5), 234-239, 2017

    公益社団法人 日本表面科学会

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