書誌事項
- タイトル別名
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- Generation Mechanism of Resistive Switching Effect Induced by Introductionof Hydrogen Ions into Perovskite-Type Oxide
- ペロブスカイト サンカブツ エ ノ スイソ イオン ドウニュウ ニ ヨッテ ユウキ サレル テイコウ スイッチング コウカ ノ ハツゲン キコウ
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We fabricated resistive random access memory (ReRAM) structure of Pt/Bi2Sr2CaCu2O8+δ(Bi−2212) bulk single crystal/Pt, and investigated Cu electronic states of the Bi−2212 by X−ray absorption near−edge structure. Hydrogen atoms are efficiently introduced into Bi−2212 with the assistance of catalytic effect of Pt by annealing Pt/Bi−2212 structure in hydrogen atmosphere. Resistive switching effect was generated by the reduction of Cu valence due to the formation of chemical bonding between in−plane oxygen of CuO2 layer and hydrogen (O−H bond), which corresponds to the formation of Cu(OH)2−like material, in the Bi−2212 in the vicinity of the Pt electrode. It is, therefore, suggested that the resistive switching effect occurred by bonding/dissociation of the O−H bond due to the migration of the hydrogen ions.
収録刊行物
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- 表面科学
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表面科学 35 (7), 356-360, 2014
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390282681436389632
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- NII論文ID
- 130004486908
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 025638736
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可
