書誌事項
- タイトル別名
-
- Investigation of the Low Resistivity Cu Wire Formation in the 8 Inch Wafer Using Ultra-High Purity Plating Materials
- コウジュンドメッキ ザイリョウ オ モチイタ テイテイコウリツ Cu ハイセン ケイセイ プロセス ノ 8 インチウエハ ニ ヨル ケンショウ
この論文をさがす
抄録
We have confirmed the effectiveness of ultra-high purity plating material on the formation of low resistivity Cu wires for 22 nm level ULSIs using 8 inch wafer. The resistivity of the 30 nm wide Cu wires formed by ultra-high purity process is found to be 30% lower than those for Cu wires fabricated by the conventional process. It was also found that the grain size of the ultra- high purity processed Cu wires is larger than that of the conventional processed Cu wires by 30%, and the grain size is much more uniform. This innovative new process is expected to be one of the powerful candidates as the Cu wire forming process for 22 nm level ULSIs.<br>
収録刊行物
-
- 日本金属学会誌
-
日本金属学会誌 75 (7), 386-391, 2011
公益社団法人 日本金属学会
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390282681457789440
-
- NII論文ID
- 10029368773
-
- NII書誌ID
- AN00187860
-
- ISSN
- 18806880
- 24337501
- 00214876
-
- NDL書誌ID
- 11171491
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
-
- 抄録ライセンスフラグ
- 使用不可