Evaluation of Internal Stresses in Single-, Double- and Multi-Layered TiN and TiAlN Thin Films by Synchrotron Radiation

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  • HANABUSA Takao
    Department of Mechanical Engineering, Tokushima University
  • KUSAKA Kazuya
    Department of Mechanical Engineering, Tokushima University
  • MATSUE Tatsuya
    Department of Material Engineering, Niihama National College of Technology
  • NISHIDA Masayuki
    Department of Mechanical Engineering, Kobe City College of Technology
  • SAKATA Osami
    Experimental Facilities Division, Japan Synchrotron Radiation Research Institute
  • SATO Toshiki
    Materials Research Laboratory, Kobe Steel Ltd.

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説明

Residual stresses in TiN and TiAlN films on steel substrate were investigated by ultra high X-rays of synchrotron radiation. The specimens prepared in this study were single-, double- and multi-layer TiN and TiAlN films deposited on high speed steel substrate by arc-ion plating. The minimum thickness available for the residual stress measurement was 0.8µm by in-lab equipment whereas below 0.1µm by synchrotron radiation. Extremely large compressive residual stresses were found in the films. Residual stresses in TiAlN films were more than twice larger than those in TiN films, resulting to reduce the average residual stress in the whole film system by making double- or multi-layer film construction comparing to that in the single TiAlN film.

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