ＩＣＰ質量分析法の進歩と半導体関連材料中超微量不純物元素分析への適用

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タイトル別名
  • Development of ICP-MS and Its Applications to Ultra-Trace Elemental Analysis of Semiconductor Materials.
  • ICP シツリョウ ブンセキホウ ノ シンポ ト ハンドウタイ カンレン ザイ

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抄録

Over the past decade, inductively coupled plasma mass spectrometry (ICP-MS) has been regarded to be one of the most powerful techniques for ultra-trace elemental analysis. This technique offers excellent analytical characteristics, (1) simplicity of spectra compared with ICP-AES, (2) extremely low detection limits (pg/ml) for most elements, (3) a broad linear dynamic range, (4) rapid multi-element determination, (5) isotope ratio and isotope dilution method capability, and (6) rapid qualitative analysis for ultra-trace metal impurities. However, even the most modern ICP-MS instruments still suffer from a number of spectral and non-spectral interferences. In order to avoid isobaric overlaps, manufacturers adopted two different concepts. One is a combination of shield-torch and chamber-gas flow for a quadrupole type MS and the other is the usage of a double-focusing high resolution (HR) mass spectrometer. Nowadays, there are ten manufacturers of ICP-MS all over the world.<br>In this paper, the history of development of ICP-MS is briefly reviewed at first. Applications of ICP-MS to ultra-trace elemental analysis of semiconductor materials (from water to Si wafer) are then documented, focusing the present conditions and meaning of ICP-MS analysis in this industrial field. The increase of memory capacity in the integrated circuit demands the cleanliness as high as possible for each production process. The analytical techniques of (HR-)ICP-MS including ETV is becoming an essential technology to improve their productivity.

収録刊行物

  • 質量分析

    質量分析 45 (2), 159-174, 1997

    一般社団法人 日本質量分析学会

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