Corrosion Behavior of Aluminum in a Strong Acidic Solution for Post-wiring Process

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  • HAYAMIZU Naoya
    Graduate School of Environment and Information Sciences, Yokohama National University Corporate Manufacturing Engineering Center, Toshiba Corporation
  • UEMATSU Ikuo
    Corporate Manufacturing Engineering Center, Toshiba Corporation
  • AMEMIYA Takashi
    Graduate School of Environment and Information Sciences, Yokohama National University
  • ITOH Kiminori
    Graduate School of Engineering, Yokohama National University

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Other Title
  • 強酸性配線後処理液中でのアルミニウムの腐食挙動
  • キョウサンセイ ハイセン アトショリエキチュウ デノ アルミニウム ノ フショク キョドウ

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Description

In the semiconductor manufacturing process, aluminum wiring is formed by reactive ion etching (RIE), and followed by residue removal by ashing and immersing wafers in post-processing solution. Inorganic based composition makes the post-processing solution become more environmentally friendly. Nevertheless, the post-processing solution often causes corrosion in the liquid phase processing. In this report, we evaluated the behavior of aluminum in a strong acidic post-processing solution, i.e., the characteristics of the galvanic corrosion, and the effects of corrosion inhibitor. It was observed that the galvanic corrosion occurred on aluminum counterpart of titanium nitride used as a barrier metal. However, it was found that by adding the ammonium polyphosphate, a corrosion inhibitor, into the post-processing solution, corrosion could be suppressed.

Journal

  • Electrochemistry

    Electrochemistry 77 (1), 63-67, 2009

    The Electrochemical Society of Japan

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