ヨウ素でドープしたポリアセチレンとインジウムとの接合特性

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タイトル別名
  • Junction properties of I2-doped polyacetylene with Indium.
  • ヨウソ デ ドープシタ ポリアセチレン ト インジウム ト ノ セツゴウ トク

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抄録

The junction properties of I2-doped polyacetylenes with Indium have been studied in the sandwich con-figuration. The conductivity of doped polyacetylenes was in the range of 6.60×10-3-7.62S/cm. All the I2-doped polyacetylenes gave rectifying contacts for Indium, while they gave ohmic contacts for Gold. Current-voltage and capacitance-voltage characteristics were examined and analyzed. Schottky barriershave been formed between I2-doped polyacetylene and Indium, though the ideality factors of the barrierswere high. With an increase of conductivity, the bulk resistance decreased and the reverse bias saturationcurrent increased.

収録刊行物

  • 高分子論文集

    高分子論文集 44 (4), 251-258, 1987

    公益社団法人 高分子学会

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