書誌事項
- タイトル別名
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- Dosimetry for middle level radiation using ESR spectroscopy of silicon dioxide reagents
- 2サンカ ケイソ シヤク ノ ESR シグナル オ モチイタ チュウ レベル ノ センリョウ ソクテイ
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Although E' defect center in silicate glass and crystalline quartz was discovered for an excellent dosimetry for ultra-high level radiation above 104 Gy (Wieser and Regulla, 1990), in this work, Ge center in reagent quartz and HOHC (hydronium ion combined with oxygen hole center) in silicon dioxide made from silicon tetraethoxide were found, respectively, to be useful dosimetries up to 2000 Gy and 6000 Gy in the middle level radiation. The use of other defect centers such as vacancy or valence alteration radicals of E' (oxygen vacancy), POR (peroxyl radical) and NBOHC (non-bridging oxygen hole center), and besides, the centers due to Al or Ti impurities were, on the contrary, inadequate for the dosimetry in above ranges.
収録刊行物
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- 岩石鉱物科学
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岩石鉱物科学 32 (5), 211-218, 2003
一般社団法人 日本鉱物科学会
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詳細情報 詳細情報について
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- CRID
- 1390282681501488896
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- NII論文ID
- 10012488212
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- NII書誌ID
- AA1146088X
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- COI
- 1:CAS:528:DC%2BD2cXisFKls7k%3D
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- ISSN
- 13497979
- 1345630X
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- NDL書誌ID
- 6858639
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
