Preparation of a Novel Fluorosilicate Salt for Electrodeposition of Silicon at Low Temperature

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  • KATAYAMA Yasushi
    Department of Applied Chemistry, Faculty of Science and Technology, Keio University
  • YOKOMIZO Masakazu
    Department of Applied Chemistry, Faculty of Science and Technology, Keio University
  • MIURA Takashi
    Department of Applied Chemistry, Faculty of Science and Technology, Keio University
  • KISHI Tomiya
    Department of Applied Chemistry, Faculty of Science and Technology, Keio University

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  • Preparation of Novel Fluorosilicate Salt for Electrodeposition of Silicon at Low Temperature

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Abstract

<p>A novel fluorosilicate salt, 1-ethyl-3-methylimidazolium hexafluorosilicate ((EMI)2SiF6), was prepared by the reaction of EMICl and hexafluorosilicate acid aqueous solution. A transparent thin film containing silicon was deposited on a silver electrode by potentiostatic electrolysis in molten (EMI)2SiF6 at 90°C. The film was reactive against water to form silicon dioxide. (EMI)2SiF6 was found to dissolve in 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfone)imide (EMITFSI) room temperature molten salt. The same thin film was also obtained on a silver electrode by potentiostatic electrolysis in EMITFSI containing (EMI)2SiF6 at room temperature.</p>

Journal

  • Electrochemistry

    Electrochemistry 69 (11), 834-836, 2001-11-05

    The Electrochemical Society of Japan

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