The challenge to MOCVD for an InGaN LED

DOI Web Site 13 References

Bibliographic Information

Other Title
  • InGaN LED用MOCVDの課題
  • InGaN LED用MOCVDの課題 : 基板材料とコストダウン戦略
  • InGaN LEDヨウ MOCVD ノ カダイ : キバン ザイリョウ ト コストダウン センリャク
  • A strategy for reducing the cost with substrate materials
  • 基板材料とコストダウン戦略

Search this article

Abstract

<p>Continuing cost reduction methods for epitaxial growth of the LED structure by MOCVD is discussed for the deployment of LEDs in solid state lighting. The epitaxial cost on a sapphire, silicon and bulk GaN substrate is compared. Lumen production per year per MOCVD machine is highlighted to be as important as the unit area epitaxial cost. The challenges to a production MOCVD tool are also shown.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 82 (10), 858-861, 2013-10-10

    The Japan Society of Applied Physics

References(13)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top