Technology for epitaxial growth of nitride semiconductor on Si substrate and its impact

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  • Si基板上への窒化物半導体のエピタキシャル成長技術とインパクト
  • Si キバンジョウ エノ チッカブツ ハンドウタイ ノ エピタキシャル セイチョウ ギジュツ ト インパクト

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<p>The history of epitaxial growth technology for the growth of a nitride semiconductor on a Si substrate is presented. The stress-relaxation effect of the AlN/GaN multilayer structure and the history of development work carried out by the author are explained. Even in the case of thick-film growth, a 5-inch crack-free wafer was realized. A light-emitting device and an electronic device based on this wafer are highlighted.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 76 (5), 489-494, 2007-05-10

    The Japan Society of Applied Physics

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