Growth and characterization of semiconducting iron disilicide bulk crystals

DOI Web Site 17 References
  • UDONO Haruhiko
    Department of Electrical and Electronic Engineering, College of Engineering, Ibaraki University

Bibliographic Information

Other Title
  • 半導体鉄シリサイドの結晶成長と基礎物性
  • ハンドウタイ テツ シリサイド ノ ケッショウ セイチョウ ト キソ ブッセイ

Search this article

Description

<p>The semiconducting iron disilicide β-FeSi2 is increasingly attracting attention as a suitable material for Si-based optoelectronics, because its film is epitaxially grown on a Si substrate using a conventional Si-ULSI process. However, investigations on the fundamental properties of β-FeSi2 are limited so far. In this paper, we report the solution growth of β-FeSi2 bulk single crystals and their electrical, optical and structural properties.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 76 (7), 790-793, 2007-07-10

    The Japan Society of Applied Physics

References(17)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top