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A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference
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- Zhang Yuxin
- The School of Information Science and Engineering, Harbin Institute of Technology (Weihai)
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- Li Jinghu
- The College of Computer and Information Sciences, Fujian Agriculture and Forestry University Xiamen Eochip Seiconductor Co., Ltd.
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- Wang Xinsheng
- The School of Information Science and Engineering, Harbin Institute of Technology (Weihai)
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- Luo Zhicong
- Xiamen Eochip Seiconductor Co., Ltd. The College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University
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- Zhou Yanfei
- Xiamen Eochip Seiconductor Co., Ltd.
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Description
<p>A high-precision and low-temperature-coefficient bandgap voltage reference is proposed in 0.11 µm CMOS process. A temperature piecewise compensation circuit is added to a traditional bandgap reference to decrease the temperature coefficient (TC). The digital trimming technology has been used to solve the deviation of TC and output voltage resulting from process corner and mismatch. Simulation result shows that the bandgap reference achieves TC of 2.18 ppm/°C from -40°C to 125°C. Bandgap reference output voltage is 1.2 V with in the error of ±5 mV.</p>
Journal
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- IEICE Electronics Express
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IEICE Electronics Express 18 (11), 20210162-20210162, 2021-06-10
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390288314619542656
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- NII Article ID
- 130008050852
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- ISSN
- 13492543
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed