Potential barrier for oxidation of HfSi<sub>2</sub>/Si(111) surface studied with super sonic O<sub>2</sub> molecular beam
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- Kakiuchi Takuhiro
- Faculty of Science, Ehime University
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- Shiraishi Akira
- Faculty of Science, Ehime University
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- Yamane Ryotaro
- Faculty of Science, Ehime University
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- Yano Takahiro
- Faculty of Science, Ehime University
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- Tsuda Yasutaka
- Japan Atomic Energy Agency
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- Yoshigoe Akitaka
- Japan Atomic Energy Agency
Bibliographic Information
- Other Title
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- 超音速酸素分子線照射によるHfSi<sub>2</sub>/Si(111)表面の酸化と反応障壁高さ
Abstract
<p>The oxidation processes of Hf disilicide on Si(111) substrate [HfSi2/Si(111)] after supersonic O2 molecular beam (SOMB) irradiation were investigated with synchrotron radiation soft X-ray photoelectron spectroscopies of Hf 4f, Si 2p, and O 1s core-levels. A direct dissociation process of the impinging O2 will be discussed from the oxidation progression depending on SOMB kinetic energy (KE) increase. In addition, the potential barrier for oxidation of HfSi2/Si(111) will be also demonstrated from a stepwise growth of the total area of Hf oxide species depending on KE of SOMB.</p>
Journal
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- Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science
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Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science 2021 (0), 3P01-, 2021
The Japan Society of Vacuum and Surface Science
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Details 詳細情報について
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- CRID
- 1390290493078596224
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- NII Article ID
- 130008134203
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- ISSN
- 24348589
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed